Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device, Method of Loading Substrate and Non-Transitory Computer-readable Recording Medium

ABSTRACT

Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.16/059,760 filed Aug. 9, 2018, which is a continuation of InternationalApplication No. PCT/JP2016/060652, filed on Mar. 31, 2016, the entirecontents of which are hereby incorporated by reference.

TECHNICAL FIELD

The present disclosure relates to a method of manufacturing asemiconductor device, a method of loading a substrate, and anon-transitory computer-readable recording medium.

BACKGROUND

Recently, a surface area of a semiconductor device has been steadilyincreasing due to high integration and three-dimensional structure ofthe semiconductor device. In a semiconductor manufacturing process, aso-called loading effect such as a change in thickness of a film formedon a substrate due to an increased surface area of the semiconductordevice becomes a serious problem. Thus, a film forming technique forsuppressing an influence of the loading effect is required. As a methodfor coping with such a demand, there is a method of forming a film byalternately supplying process gases onto a substrate.

The method of forming the film by alternately supplying the processgases is effective for suppressing the loading effect. Recently, asubstrate having a surface area at least three times of that of a baresubstrate may be used. The term “surface area” throughout thisspecification means the total area of all the outside surfaces of threedimensional shapes (such as patterns) formed on the upper surface of asubstrate. The bare substrate refers to a substrate that no pattern isformed thereon. Hereinafter, the substrate whose surface area is atleast three times of that of the bare substrate is referred to as a“large surface area substrate”. When a batch processing apparatus suchas a substrate processing apparatus configured to load (charge) andprocess a plurality of large surface area substrates according to theabove-mentioned method of forming a film by alternately supplying theprocess gases, a thickness of a film formed on each of the large surfacearea substrates may vary depending on the surface area of each of thelarge surface area substrates and the number of the large surface areasubstrates loaded in the batch processing apparatus. Therefore, it isdifficult to control the thickness of the film formed on each of thelarge surface area substrates.

SUMMARY

Described herein is a technique capable of improving the controllabilityof a thickness of a film formed on a large surface area substrate havinga surface area greater than a surface area of a bare substrate andimproving the thickness uniformity between films formed on a pluralityof large surface area substrates accommodated in a substrate loadingregion by reducing the influence of the surface area of the largesurface area substrate and the number of the large surface areasubstrates due to a loading effect even when the plurality of largesurface area substrates are batch-processed using a batch typeprocessing furnace.

According to one aspect of the technique described herein, a method ofmanufacturing a semiconductor device may use a substrate retainerincluding a substrate loading region provided with a plurality of slotsand capable of loading and holding a maximum of X (X is a natural numberequal to or greater than 3) substrates in the plurality of slots, andmay include: (a) loading Y (Y is a natural number less than X)substrates to be processed in the substrate retainer in a dispersedmanner by adjusting Z (Z is a natural number) indicating a maximumnumber of the substrates to be processed loaded consecutively in thesubstrate retainer such that a density distribution of the substrates tobe processed in the substrate loading region when Z is adjusted is moreflattened compared with the density distribution of the substrates to beprocessed when Z is equal to Y; and (b) loading the substrate retainerwhere the Y substrates to be processed are dispersedly loaded into aprocess chamber and processing the Y substrates to be processed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 schematically illustrates a vertical cross-section of a verticaltype processing furnace of a substrate processing apparatus preferablyused in an embodiment described herein.

FIG. 2 schematically illustrates a cross-section taken along the lineA-A of the vertical type processing furnace of the substrate processingapparatus shown in FIG. 1.

FIG. 3 is a block diagram schematically illustrating a configuration ofa controller and components controlled by the controller of thesubstrate processing apparatus preferably used in the embodiment.

FIG. 4 schematically illustrates a first substrate loading patternaccording to the embodiment.

FIG. 5 schematically illustrates a second substrate loading patternaccording to the embodiment.

FIG. 6 schematically illustrates a third substrate loading patternaccording to the embodiment.

FIG. 7 is a graph showing thickness distributions of films formed onsubstrates loaded in a substrate loading region of the embodimentaccording to the first substrate loading pattern, the second substrateloading pattern and the third substrate loading pattern, respectively(differences between normalized film thicknesses of the substrates inthe substrate loading region and a normalized film thickness of asubstrate loaded at the bottom of the substrate loading region,respectively).

FIG. 8 is a graph showing thickness distributions of films formed on thesubstrates loaded in the substrate loading region of the embodimentaccording to the first substrate loading pattern, the second substrateloading pattern and the third substrate loading pattern, respectively(the normalized film thicknesses of the substrates in the substrateloading region, respectively).

FIG. 9 schematically illustrates a fourth substrate loading patternaccording to the embodiment.

FIG. 10 schematically illustrates a fifth substrate loading patternaccording to the embodiment.

FIG. 11 is a graph showing thickness distributions of films formed onsubstrates loaded in the substrate loading region of the embodimentaccording to the first substrate loading pattern, the fourth substrateloading pattern and the fifth substrate loading pattern, respectively(differences between normalized film thicknesses of the substrates inthe substrate loading region and a normalized film thickness of asubstrate loaded at the bottom of the substrate loading region,respectively).

FIG. 12 is a graph showing thickness distributions of the films formedon the substrates loaded in the substrate loading region of theembodiment according to the first substrate loading pattern, the fourthsubstrate loading pattern and the fifth substrate loading pattern,respectively (the normalized film thicknesses of the substrates in thesubstrate loading region, respectively).

FIG. 13 schematically illustrates a sixth substrate loading patternaccording to the embodiment.

FIG. 14 schematically illustrates a seventh substrate loading patternaccording to the embodiment.

FIG. 15 is a graph showing thickness distributions of films formed onsubstrates loaded in a substrate loading region of the embodimentaccording to the sixth substrate loading pattern and the seventhsubstrate loading pattern, respectively (differences between normalizedfilm thicknesses of the substrates in the substrate loading region and anormalized film thickness of a substrate loaded immediately below aregion where a large surface area wafers are loaded, respectively).

FIG. 16 is a graph showing thickness distributions of the films formedon the substrates loaded in the substrate loading region of theembodiment according to the sixth substrate loading pattern and theseventh substrate loading pattern, respectively (the normalized filmthicknesses of the substrates in the substrate loading region,respectively).

FIG. 17 schematically illustrates an eighth substrate loading patternaccording to the embodiment that large surface area substrates areloaded dispersedly immediately below each of monitor substrates.

FIG. 18 schematically illustrates a ninth substrate loading patternaccording to the embodiment that the large surface area substrates areloaded dispersedly immediately above each of the monitor substrates.

FIG. 19 is a graph showing thickness distributions of the films formedon substrates loaded in the substrate loading region of the embodimentaccording to the first substrate loading pattern, the fourth substrateloading pattern, the eighth substrate loading pattern and the ninthsubstrate loading pattern, respectively (the normalized film thicknessesof the substrates in the substrate loading region, respectively).

FIG. 20 is a graph showing relationships between ULAD and the number ofthe large surface area substrates when the substrates are loadedcollectively (i.e., in a concentrated manner) at an upper end of thesubstrate loading region and X is equal to or greater than 25 and equalto or less than 200 wherein X is the number X slots in the substrateloading region.

FIG. 21 is a graph showing relationships between the ULAD and the numberof the large surface area substrates when the substrates are loadeddispersedly according to various manners and X is 100 wherein X is thenumber X slots in the substrate loading region.

FIG. 22 schematically illustrates a film-forming sequence according tothe embodiment.

DETAILED DESCRIPTION Embodiment

Hereinafter, an embodiment will be described with reference to FIGS. 1through 22.

Recently, a substrate having a pattern such as a stacked structure(aggregated structure) of predetermined layers or films formed on asurface of the substrate is processed due to high integration andthree-dimensional structure of a semiconductor device. As describedabove, a substrate having a large surface area compared to that of abare substrate (a substrate that no pattern is formed on a surfacethereof) is referred to as a “large surface area substrate”. Forexample, when the surface area of the bare substrate is 1, the surfacearea of the large surface area substrate is greater than 3.

A batch processing apparatus capable of batch-processing a plurality ofsubstrates can be used for processing a plurality of large surface areasubstrates. When the number of the large surface area substrates is lessthan the maximum number of substrates that the batch processingapparatus can process in a batch, in general, the large surface areasubstrates are loaded (charged) collectively in a region of a substrateretainer in order to simplify a substrate transfer pattern and toshorten the transfer time required for the large surface areasubstrates. For example, when a vertical type batch processing apparatuscapable of batch processing 100 substrates, which is an example of thebatch processing apparatus, is used for processing the plurality ofsubstrates including the plurality of large surface area substrates (forexample, 5 large surface area substrates), the 5 large surface areasubstrates may be loaded collectively in a series of slots providedconsecutively at the top portion (upper end) of the substrate retainer,or loaded collectively in a series of slots provided consecutively atthe bottom portion (lower end) of the substrate retainer, or loadedcollectively in a series of slots provided consecutively at the centerportion of the substrate retainer. Hereinafter, the plurality of largesurface area substrates is also referred to as a “group of large surfacearea wafers 601”. When the plurality of large surface area substrates isloaded in the substrate retainer as described above, the thicknesses ofthe films formed on the substrates in the vicinity of the slots of thesubstrate retainer where the 5 large surface area substrates are loadedbecome thinner than the thicknesses of the films formed on thesubstrates in the vicinity of the slots of the substrate retainer wherethe 5 large surface area substrates are not loaded. That is, thethickness uniformity between the films formed on the substrates in asubstrate loading region capable of loading 100 substrates maydeteriorate. Also, the thicknesses of the films formed on the 5 largesurface area substrates loaded in the slots provided at the centerportion of the substrate retainer are smaller than the thicknesses ofthe films formed on the 5 large surface area substrates loaded in theslots provided at the upper end or the lower end (the top portion or thebottom portion) of the substrate retainer. That is, the thicknessuniformity of films may deteriorate between different sets of 5 largesurface area substrates loaded collectively.

A total surface area of the group of large surface area substratesvaries with each batch according to the surface area of each largesurface area substrate and the number of the large surface areasubstrates loaded in each batch. Thus, an average thickness of the filmsformed on the substrates to be processed may vary with each batch eventhough the cycle for alternately supplying a plurality of process gasesunder the same process conditions is performed the same number of timesin each batch. As a result, it is difficult to control the thicknessesof the films formed on the substrates when the substrates including thelarge surface area substrates are processed.

The inventors of the present application have studied the problemsdescribed above and confirmed that the cause of the problems describedabove is that the large surface area substrates less than the maximumnumber of substrates that can be loaded in the batch processingapparatus are loaded collectively (consecutively) in the batchprocessing apparatus. Therefore, the inventors have confirmed that theproblems described above can be addressed by loading (charging) thelarge surface area substrates in the slots of the substrate retainer ina dispersed manner. Preferably, the large surface area substrates areloaded (charged) in a proportionally dispersed manner. That is, it ispreferable that a density distribution of the large surface areasubstrate in the substrate loading region is flattened. By flatteningthe density distribution of the large surface area substrate in thesubstrate loading region, it possible to obtain a desired thicknessuniformity for the films formed on the large surface area substratesloaded in the slots of the substrate retainer. Further, it is possibleto obtain a desired film thickness by automatically correcting thenumber of times of the cycle of alternately supplying the plurality ofprocess gases is performed in accordance with a total surface area ofthe large surface area substrates (an amount of the surface area of eachlarge surface area substrate multiplied by the number of the largesurface area substrates). For example, even if the total surface area ofthe large surface area substrates varies in each batch, a film having aconstant or nearly constant thickness can be obtained without beingaffected by the variation of the total surface area.

(1) Configuration of Substrate Processing Apparatus

Hereinafter, a substrate processing apparatus 10 will be described. Asshown in FIG. 1, a processing furnace 202 serving as a batch typeprocessing furnace includes a heater 207 serving as a heating apparatus(temperature adjusting mechanism). The heater 207 is cylindrical, andvertically installed while being supported by a support plate (notshown). The heater 207 also functions as an activation mechanism(excitation mechanism) for activating (exciting) a gas by heat.

A reaction tube 203 is provided in the heater 207 so as to be concentricwith the heater 207. The reaction tube 203 is made of a heat-resistantmaterial such as quartz (SiO₂) and silicon carbide (SiC), andcylindrical with a closed upper end and an open lower end. A manifold209 is provided under the reaction tube 203 so as to be concentric withthe reaction tube 203. The manifold 209 is made of a metal such asstainless steel (SUS), and cylindrical with open upper and lower ends.An upper end of the manifold 209 is engaged with the lower end of thereaction tube 203 so as to support the reaction tube 203. An O-ring 220a serving as a sealing member is provided between the manifold 209 andthe reaction tube 203. Similar to the heater 207, the reaction tube 203is vertically installed. A processing vessel (reaction vessel) isconstituted by the reaction tube 203 and the manifold 209. A processchamber 201 is provided in the hollow cylindrical portion of theprocessing vessel. The process chamber 201 may accommodate a pluralityof wafers 200 as substrates.

Nozzles 410 and 420 are provided in the process chamber 201 throughsidewalls of the manifold 209. Gas supply pipes 310 and 320 serving asgas supply lines are connected to the respective nozzles 410 and 420.

Mass flow controllers (MFCs) 312 and 322 serving as flow ratecontrollers (flow rate control mechanisms) and valves 314 and 324serving as opening/closing valves are sequentially installed at the gassupply pipes 310 and 320 from the upstream sides toward the downstreamsides of the gas supply pipes 310 and 320, respectively. Gas supplypipes 510 and 520 for supplying an inert gas are connected to thedownstream sides of the valves 314 and 324 installed at the gas supplypipes 310 and 320, respectively. MFCs 512 and 522 and valves 514 and 524are sequentially installed at the gas supply pipes 510 and 520 from theupstream sides toward the downstream sides of the gas supply pipes 510and 520, respectively.

As shown in FIGS. 1 and 2, the nozzles 410 and 420 are provided in anannular space between an inner wall of the reaction tube 203 and thewafers 200, and extend from bottom to top of the inner wall of thereaction tube 203 along a stacking direction of the wafers 200. That is,the nozzles 410 and 420 are provided in a region that horizontallysurrounds a wafer arrangement region at one side of the waferarrangement region where the wafers 200 are arranged along the waferarrangement region.

A plurality of gas supply holes 410 a and a plurality of gas supplyholes 420 a for supplying gases are provided at side surfaces of thenozzles 410 and 420, respectively. The plurality of gas supply holes 410a and the plurality of gas supply holes 420 a are open toward the centerof the reaction tube 203, and configured to supply gases toward thewafers 200. The plurality of gas supply holes 410 a and the plurality ofgas supply holes 420 a are provided from the lower portion of thereaction tube 203 to the upper portion thereof. The plurality of gassupply holes 410 a has the same area and pitch and the plurality of gassupply holes 420 a has the same area and pitch. However, the pluralityof gas supply holes 410 a and the plurality of gas supply holes 420 aare not limited thereto. The opening areas of the plurality of gassupply holes 410 a and the plurality of gas supply holes 420 a maygradually increase from the lower portion (upstream side) toward theupper portion (downstream side) of the nozzles 410 and 420 to maintainthe uniformity of the amounts of gases supplied through the plurality ofgas supply holes 410 a and the plurality of gas supply holes 420 a,respectively.

According to the embodiment, the gases are supplied through the nozzles410 and 420 disposed in the vertical annular space defined by the innersurface of the sidewall of the reaction tube 230 and the edges of thewafers 200 arranged in the reaction tube 203. The gases are injectedinto the reaction tube 203 toward the wafers 200 through the pluralityof gas supply holes 410 a of the nozzle 410 and the plurality of gassupply holes 420 a of the nozzle 420, respectively. The gases injectedinto the reaction tube 203 mainly flow parallel to the surface of thewafers 200, that is, horizontally.

According to the above-described configuration, the gases are uniformlysupplied to each of the wafers 200. After passing the surfaces of thewafers 200, the gases flow toward an exhaust port, that is, an exhaustpipe 231 described later. However, the flow direction of the gases mayvary depending on the location of the exhaust port, and is not limitedto the vertical direction.

For example, a titanium (Ti) source gas containing titanium such astitanium tetrachloride (TiCl₄) serving as a source gas (one of processgases) is supplied into the process chamber 201 via the gas supply pipe310 provided with the MFC 312 and the valve 314 and the nozzle 410.Herein, the term “source” may refer to only “source in liquid state”,only “source gas (source in gaseous state)” and both of “source inliquid state” and “source gas (source in gaseous state)”.

For example, a nitrogen (N)-containing gas such as ammonia (NH₃) servingas a reactive gas (one of process gases) is supplied into the processchamber 201 via the gas supply pipe 320 provided with the MFC 322 andthe valve 324 and the nozzle 420.

For example, the inert gas such as nitrogen (N₂) gas is supplied intothe process chamber 201 via the gas supply pipes 510 and 520 providedwith the MFCs 512 and 522 and the valves 514 and 524, the gas supplypipes 310 and 320 and the nozzles 410 and 420, respectively.

A source gas supply system is constituted mainly by the gas supply pipe310, the MFC 312 and the valve 314. The source gas supply system mayfurther include the nozzle 410. A reactive gas supply system isconstituted mainly by the gas supply pipe 320, the MFC 322 and the valve324. The reactive gas supply system may further include the nozzle 420.An inert gas supply system is constituted mainly by the gas supply pipes510 and 520, the MFCs 512 and 522 and the valves 514 and 524. The sourcegas supply system and the reactive gas supply system may be collectivelyreferred to as a gas supply system. The gas supply system may furtherinclude the inert gas supply system.

The exhaust pipe 231 serving as an exhaust flow path for exhausting theinner atmosphere of the process chamber 201 is provided at the reactiontube 203. A vacuum pump 246 serving as a vacuum exhauster is connectedto the exhaust pipe 231 through a pressure sensor 245 and an APC(Automatic Pressure Controller) valve 243. The pressure sensor 245serves as a pressure detector (pressure detection mechanism) to detectthe inner pressure of the process chamber 201, and the APC valve 243serves as an exhaust valve (pressure adjusting mechanism). With thevacuum pump 246 in operation, the APC valve 243 may be opened/closed tovacuum-exhaust the process chamber 201 or stop the vacuum exhaust. Withthe vacuum pump 246 in operation, the opening degree of the APC valve243 may be adjusted based on the pressure detected by the pressuresensor 245, in order to control the inner pressure of the processchamber 201. An exhaust system is constituted mainly by the exhaust pipe231, the APC valve 243 and the pressure sensor 245. The exhaust systemmay further include the vacuum pump 246.

A seal cap 219 serving as a furnace opening cover can airtightly sealthe lower end opening of the manifold 209, is provided under themanifold 209. An O-ring 220 b serving as a sealing member is provided onthe upper surface of the seal cap 219 so as to be in contact with thelower end of the manifold 209. A rotating mechanism 267 to rotate a boat217 described later is provided under the seal cap 219 opposite to theprocess chamber 201. The rotating mechanism 267 includes a rotatingshaft 255 connected to the boat 217 through the seal cap 219. As therotating mechanism 267 rotates the boat 217, the wafers 200 are rotated.The seal cap 219 may be moved upward/downward in the vertical directionby a boat elevator 115 provided outside the reaction tube 203vertically. The boat elevator 115 serves as an elevating mechanism. Whenthe seal cap 219 is moved upward/downward by the boat elevator 115, theboat 217 may be loaded into the process chamber 201 or unloaded out ofthe process chamber 201. The boat elevator 115 serves as a transferdevice (transfer mechanism) that loads the boat 217, that is, the wafers200 into the process chamber 201 or unloads the boat 217, that is, thewafers 200 out of the process chamber 201. A shutter 219 s is providedunder the manifold 209. The shutter 219 s serves as a furnace openingcover can airtightly seal the lower end opening of the manifold 209while the seal cap 219 is moved downward by the boat elevator 115. AnO-ring 220 c serving as a sealing member is provided on the uppersurface of the shutter 219 s so as to be in contact with the lower endof the manifold 209. The opening/closing operations of the shutter 219 ssuch as the elevation and the rotation is controlled by a shutteropening/closing mechanism 115 s.

The boat 217 serving as the substrate retainer aligns wafers 200, forexample, from 5 to 200 wafers 200 in the vertical direction and supportsthe wafers 200, while the wafers 200 are horizontally positioned andcentered with each other. That is, the boat 217 supports (accommodates)the wafers 200 with predetermined intervals therebetween. The boat 217is made of a heat-resistant material such as quartz and SiC. Aninsulating plate is provided in multiple stages under the boat 217. Theinsulating plate (not shown) is made of a heat-resistant material suchas quartz and SiC.

A wafer loading region 600 will be described with reference to FIG. 4.The wafer loading region 600 serving as the substrate loading regionrefers to a region of the boat 217 where the wafers 200 are loaded(charged or accommodated). When the wafers 200 accommodated in the boat217 are processed, process performances may be different between a firstset of wafers accommodated in the vicinity of the upper and lower endportions of the boat 217 and a second set of wafers accommodated in thevicinity of the center portion of the boat 217. For example, in afilm-forming apparatus serving as the substrate processing apparatus 10,the thickness uniformity of the films formed on the surfaces of thewafers may be different between the first set of wafers and the secondset of wafers. Further, the average thickness of the films formed on thesurfaces of the wafers may also be different between the first set ofwafers and the second set of wafers, or the thickness uniformity offilms between the surfaces of the wafers may be deteriorated. Forexample, when no side dummy wafer (not shown) serving as a side dummysubstrate is loaded in the substrate retainer, the center portion of thewafers loaded in the both ends of the boat 217 tends to be cooler thanthe periphery of the wafers loaded in the both ends of the boat 217.Thus, the thickness of the film formed on the center portion of thewafers loaded in the both ends of the boat 217 is reduced and thethickness uniformity between the films formed on the surfaces of thewafers 200 may deteriorate. In order to achieve a predeterminedthickness uniformity of films between the surfaces of the substrates,side dummy wafers (not shown) are loaded in the vicinity of both ends ofthe boat 217 and the wafers 200 to be processed are loaded between theside dummy wafers provided in the vicinity of both ends of the boat 217.The side dummy wafer region (not shown) where the side dummy wafers areloaded is not included in the wafer loading region 600. For example,when the boats 217 can accommodate a total of 115 wafers 200, that is,when the boats 217 includes 115 slots (not shown) for loading the wafers200, and a total of 15 side dummy wafers are loaded in the slotsprovided at the upper and lower ends of the boats 217, for example, 5side dummy wafers are loaded in the slots provided at one end of theboats 217 and 10 side dummy wafers are loaded in the slots provided atthe other end of the boats 217, then, the total number of slots includedin the wafer loading region 600 is 100. The wafers 200 loaded in thewafer loading region 600 include the large surface area wafers 601serving as product wafers, monitor wafers 602 and fill-dummy wafers 603.The large surface area wafers 601 are also referred to as large surfacearea substrates, the monitor wafers 602 are also referred to as monitorsubstrates and the fill-dummy wafers 602 are also referred to asfill-dummy substrates. Wafers such as the monitor wafers 602 and thefill-dummy wafers 603 may be loaded in slots where the large surfacearea wafers 601 are not loaded. However, the slots where the largesurface area wafers 601 are not loaded may remain empty without loadingthe wafers such as the monitor wafers 602 and the fill-dummy wafers 603.

A temperature sensor 263 serving as a temperature detector is providedin the reaction tube 203. The state of electricity conducted to theheater 207 is adjusted based on the temperature detected by thetemperature sensor 263, such that the internal temperature of theprocess chamber 201 has a desired temperature distribution. Similar tothe nozzles 410 and 420, the temperature sensor 263 is L-shaped andprovided along the inner wall of the reaction tube 203.

As shown in FIG. 3, a controller 121 serving as the control device(control mechanism) is constituted by a computer including a CPU(Central Processing Unit) 121 a, a RAM (Random Access Memory) 121 b, amemory device 121 c and an I/O port 121 d. The RAM 121 b, the memorydevice 121 c and the I/O port 121 d may exchange data with the CPU 121 athrough an internal bus 121 e. For example, an input/output device 122such as a touch panel is connected to the controller 121.

The memory device 121 c is configured by components such as a flashmemory and HDD (Hard Disk Drive). A control program for controlling theoperation of the substrate processing apparatus 10 or a process recipecontaining information on the sequence and conditions of a substrateprocessing described later is readably stored in the memory device 121c. The process recipe is obtained by combining steps of a film-formingprocess (substrate processing) described later such that the controller121 can execute the steps to acquire a predetermine result, andfunctions as a program. Hereafter, the process recipe and the controlprogram are collectively referred to as a program. The process recipe issimply referred to as a recipe. In this specification, “program” mayindicate only the recipe, indicate only the control program, or indicateboth of them. The RAM 121 b is a work area where a program or data readby the CPU 121 a is temporarily stored.

The I/O port 121 d is connected to the above-described components suchas the MFCs 512, 522, 312 and 322, the valves 514, 524, 314 and 324, thepressure sensor 245, the APC valve 243, the vacuum pump 246, thetemperature sensor 263, the heater 207, the rotating mechanism 267, theboat elevator 115 and the shutter opening/closing mechanism 115 s.

The CPU 121 a is configured to read a control program from the memorydevice 121 c and execute the read control program. Furthermore, the CPU121 a is configured to read a recipe from the memory device 121 caccording to an operation command inputted from the input/output device122. According to the contents of the read recipe, the CPU 121 a may beconfigured to control various operations such as flow rate adjustingoperations for various gases by the MFCs 512, 522, 312 and 322,opening/closing operations of the valves 514, 524, 314 and 324, anopening/closing operation of the APC valve 243, a pressure adjustingoperation by the APC valve 243 based on the pressure sensor 245, a startand stop of the vacuum pump 246, a temperature adjusting operation ofthe heater 207 based on the temperature sensor 263, an operation ofrotating and adjusting rotation speed of the boat 217 by the rotatingmechanism 267, an elevating operation of the boat 217 by the boatelevator 115, and an opening/closing operation of the shutter 219 s bythe shutter opening/closing mechanism 115 s.

The controller 121 may be embodied by installing the above-describedprogram stored in an external memory device 123 into a computer. Forexample, the external memory device 123 may include a magnetic tape, amagnetic disk such as a flexible disk and a hard disk, an optical disksuch as a CD and a DVD, a magneto-optical disk such as MO, and asemiconductor memory such as a USB memory and a memory card. The memorydevice 121 c or the external memory device 123 may be embodied by anon-transitory computer readable recording medium. Hereafter, the memorydevice 121 c and the external memory device 123 are collectivelyreferred to as recording media. In this specification, “recording media”may indicate only the memory device 121 c, indicate only the externalmemory device 123, and indicate both of the memory device 121 c and theexternal memory device 123. Instead of the external memory device 123, acommunication means such as the Internet and dedicated line may be usedfor providing a program to a computer.

(2) Substrate Loading

Next, a dispersed loading (dispersed charging) of the wafers 200 intothe wafer loading region 600 will now be described.

In this specification, “dispersed loading”, “loading dispersedly” or“loading in a dispersed manner” refer to loading the large surface areawafers 601 (the group of the large surface area wafers 601) in the boat217 by dividing the group of the large surface area wafers 601 into atleast two subgroups of the large surface area wafers and loading the atleast two subgroups in the slots of the boat 2170 while providing,between the at least two subgroups, at least one slot where no largesurface area wafer 601 is loaded. According to the dispersed loadingdescribed above, the group of the large surface area wafers 601 are notloaded collectively (consecutively) in the consecutive slots of the boat217. However, the large surface area wafers 601 included in the samesubgroup may be loaded collectively (consecutively) in the consecutiveslots of the boat 217. Further, the minimum number of wafers in thesubgroups of the large surface area wafers 601 may be one.

In the embodiment, when the batch processing apparatus provided with thewafer loading region 600 capable of loading X number of wafers (herein,X is a natural number equal to or greater than 3) loads and processesless than X number of large surface area wafers 601, the large surfacearea wafers 601 less than X are loaded in the wafer loading region 600in a dispersed manner. As a result, a density distribution of the largesurface area substrate indicating a loading density of the large surfacearea wafers 601 in each slot of the wafer loading region 600 can beflattened and the thickness uniformity between the films formed on thewafers 200 including the large surface area wafers 601 can be improved.Hereinafter, the large surface area substrate density is also referredto as a “LAD”. In the specification, a value indicating a uniformity ofthe LAD (the large surface area substrate density) in the wafer loadingregion 600 is defined as a uniformity of the density distribution oflarge surface area substrate. Hereinafter, the uniformity of the LAD isalso referred to as a “ULAD”. In the embodiment, when 25≤X≤200, the ULADvalue is calculated based on an average of the LAD values, wherein a LADvalue for a given slot is defined as, for example, the density of largesurface area substrates loaded in a total of 11 slots including thegiven slot and 10 slots closest to the given slot. When 11≤X≤24, theULAD value is calculated based on an average of the LAD values, whereina LAD value for a given slot is defined as, for example, the density oflarge surface area substrates loaded in a total of 5 slots including thegiven slot and 4 slots closest to the given slot. When 5≤X≤10, the ULADvalue is calculated based on an average of the LAD values, wherein a LADvalue for a given slot is defined as, for example, the density of largesurface area substrates loaded in a total of 3 slots including the givenslot and 2 slots closest to the given slot. In each of theabove-described cases, the large surface area wafers 601 are loadeddispersedly such that the ULAD value when the large surface area wafers601 are loaded dispersedly is less than the ULAD value when the largesurface area wafers 601 are loaded not dispersedly (that is, when thelarge surface area wafers 601 are loaded collectively). Thus, the LADdistribution in the wafer loading region 600 can be further flattened.

Hereinafter, equations for calculating the LAD in the presentspecification are described. Assume that a total number of the slotsprovided in the wafer loading region 600 is X. As described above, X isa natural number equal to or greater than three and represents themaximum number of the wafers 200 can be loaded (charged) in the waferloading region 600 of the boat 217. A slot provided at the lowermost ofthe wafer loading region 600 of the boat 217 is referred to a slot #1. Aslot provided at the uppermost of the wafer loading region 600 of theboat 217 is referred to a slot # X. A slot provided immediately abovethe slot #1 is referred to as a slot #2. A slot provided immediatelybelow the slot # X is referred to as a slot #(X-1). In this manner, eachslot in the wafer loading region 600 is denoted. In the equations below,“LA_(n)” refers to a determination value for a slot # n which indicateswhether or not a large surface area wafer 601 exists in the slot # n,and “LAD_(n)” refers to the LAD value for the slot # n where n is anatural number equal to or less than X. The value of the LA_(n) is 1when the large surface area wafer 601 is loaded in the slot # n, andzero (0) when the large surface area wafer 601 is not loaded in the slot# n

<When 25≤X≤200>

When 25≤X≤200, that is, when X is equal to or greater than 25 and equalto or less than 200, the LAD value for the slot # n (LAD_(n)) iscalculated as follows. When n is from 1 to 6, that is, when n is equalto or greater than 1 and equal to or less than 6, the LAD_(n) isexpressed as Equation 1 below by an average of determination values of atotal of 11 slots, that is, from the slot #1 to the slot #11.

LAD _(n)=(LA ₁ +LA ₂ +LA ₃ +LA ₄ +LA ₅ +LA ₆ +LA ₇ +LA ₈ +LA ₉ +LA ₁₀+LA ₁₁)/11  [Equation 1]

When n is from 7 to (X-6), that is, when n is equal to or greater than 7and equal to or less than (X-6), the LAD_(n) is expressed as Equation 2below by an average of the determination values of a total of 11 slots,that is, from the slot #(n−5) to the slot #(n+5).

LAD _(n)=(LA _(n−5) +LA _(n−4) +LA _(n−3) +LA _(n−2) +LA _(n−1) +LA _(n)+LA _(n+1) +LA _(n+2) +LA _(n+3) +LA _(n+4) +LA _(n+5))/11  [Equation 2]

When n is from (X-5) to X, that is, when n is equal to or greater than(X-5) and equal to or less than X, the LAD_(n) is expressed as Equation3 below by an average of the determination values of a total of 11slots, that is, from the slot #(X-10) to the slot # X.

LAD _(n)=(LA _(X−10) +LA _(X−9) +LA _(X−8) +LA _(X−7) +LA _(X−6) +LA_(X−5) +LA _(X−4) +LA _(X−3) +LA _(X−2) +LA _(X−1) +LA_(X))/11  [Equation 3]

<When 11≤X≤24>

When 11≤X≤24, that is, when X is equal to or greater than 11 and equalto or less than 24, the LAD value for the slot # n is calculated asfollows. When n is from 1 to 3, that is, when n is equal to or greaterthan 1 and equal to or less than 3, the LAD_(n) is expressed as Equation4 below by an average of the determination values of a total of 5 slots,that is, from the slot #1 to the slot #5.

LAD _(n)=(LA ₁ +LA ₂ +LA ₃ +LA ₄ +LA ₅)/5  [Equation 4]

When n is from 4 to (X−3), that is, when n is equal to or greater than 4and equal to or less than (X−3), the LAD_(n) is expressed as Equation 5below by an average of the determination values of a total of 5 slots,that is, from the slot #(n−2) to the slot #(n+2).

LAD _(n)=(LA _(n−2) +LA _(n−1) +LA _(n) +LA _(n+1) +LA_(n+2))/5  [Equation 5]

When n is from (X-2) to X, that is, when n is equal to or greater than(X-2) and equal to or less than X, the LAD_(n) is expressed as Equation6 below by an average of the determination values of a total of 5 slots,that is, from the slot #(X-4) to the slot # X.

LAD _(n)=(LA _(X−4) +LA _(X−3) +LA _(X−2) +LA _(X−1) +LA_(X))/5  [Equation 6]

<When 5≤X≤10>

When 5≤X≤10, that is, when X is equal to or greater than 5 and equal toor less than 10, the LAD value for the slot # n is calculated asfollows. When n is from 1 to 2, that is, when n is equal to or greaterthan 1 and equal to or less than 2, the LAD_(n) is expressed as Equation7 below by an average of the determination values of a total of 3 slots,that is, from the slot #1 to the slot #3.

LAD _(n)=(LA ₁ +LA ₂ +LA ₃)/3  [Equation 7]

When n is from 3 to (X-2), that is, when n is equal to or greater than 3and equal to or less than (X-2), the LAD_(n) is expressed as Equation 8below by an average of the determination values of a total of 3 slots,that is, from the slot #(n−1) to the slot #(n+1).

LAD _(n)=(LA _(n−1) +LA _(n) +LA _(n+1))/3  [Equation 8]

When n is from (X-1) to X, that is, when n is equal to or greater than(X-1) and equal to or less than X, the LAD_(n) is expressed as Equation9 below by an average of the determination values of a total of 3 slots,that is, from the slot #(X-2) to the slot # X.

LAD _(n)=(LA _(X−2) +LA _(X−1) +LA _(X))/3  [Equation 9]

In this specification, the uniformity of the large surface areasubstrate density, that is, the ULAD is expressed as Equation 10 below.

ULAD=[(LAD _(max) −LAD _(min))/LAD _(ave)]×100[%]  [Equation 10]

Herein, the LAD_(max) refers to a maximum value of the large surfacearea substrate densities in the wafer loading region 600. The LAD_(min)refers to a minimum value of the large surface area substrate densitiesin the wafer loading region 600. The LAD_(ave) refers an average of thelarge surface area substrate densities in the wafer loading region 600.

According to the embodiment, in case the maximum number of loadablesubstrates is X (X is a natural number equal to or greater than 3),i.e., the number of slots is equal to X, dispersed loading is performedas follows. Y (Y is a natural number less than X) large surface areasubstrates including patterns formed on surfaces thereof is loaded,wherein each of the large surface area substrates is a substrate whosesurface area is larger than or equal to 3πr² where r is a radiusthereof, in the substrate retainer in a dispersed manner by adjusting Z(Z is a natural number) indicating a maximum number of large surfacearea substrates loaded consecutively in the substrate retainer to beless than Y such that a ULAD (uniformity of large surface area substratedensity) when Z is adjusted is less than a ULAD when Z is equal to Y,wherein each ULAD is calculated based on: (i) a LAD (large surface areasubstrate density) of every 11 large surface area substrates loaded in atotal of 11 slots consisting of a given slot and 10 slots closestthereto when X is equal to or greater than 25 and equal to or less than200, (ii) a LAD of every 5 large surface area substrates loaded in atotal of 5 slots consisting of a given slot and 4 slots closest theretowhen X is equal to or greater than 11 and equal to or less than 24, and(iii) a LAD of every 3 large surface area substrates loaded in a totalof 3 slots consisting of a given slot and 2 slots closest thereto when Xis equal to or greater than 5 and equal to or less than 10.

Hereinafter, specific examples of the embodiment will be described.First, an example of improving the thickness uniformity between thefilms formed on the large surface area wafers 601 accommodated in thewafer loading region 600 by loading the large surface area wafers 601dispersedly (in a dispersed manner) will be described. FIG. 4schematically illustrates a first substrate loading pattern that nolarge surface area wafer 601 is loaded in the wafer loading region 600of the batch processing apparatus. The wafer loading region 600 is, forexample, capable of accommodating a total of 100 wafers. In other words,100 slots are provided in the wafer loading region 600 of the batchprocessing apparatus. FIG. 5 schematically illustrates a secondsubstrate loading pattern that a total of 24 large surface area wafers601 are loaded in the wafer loading region 600 of the batch processingapparatus capable of accommodating 100 wafers. According to the secondsubstrate loading pattern, the total of 24 large surface area wafers 601are loaded collectively at the upper portion of the wafer loading region600 of the boat 217. That is, the total of 24 large surface area wafers601 are loaded in a series of slots provided consecutively at the upperportion of wafer loading region 600. Conventionally, the wafers areloaded using the second loading pattern. FIG. 6 schematicallyillustrates a third substrate loading pattern that a total of 24 largesurface area wafers 601 are loaded dispersedly (in a dispersed manner)in the wafer loading region 600 of the batch processing apparatuscapable of accommodating 100 wafers. Referring to FIG. 6, the total of24 large surface area wafers 601 are loaded dispersedly in the waferloading region 600 such that the uniformity of the large surface areasubstrate density (the ULAD) of the wafer loading region 600 accordingto the third substrate loading pattern is less than the ULAD of thewafer loading region 600 according to the second substrate loadingpattern shown in FIG. 5.

The monitor wafers 602 are inserted into the slot #1, the slot #25, theslot #50, the slot #75 and the slot #100 according to each of the firstsubstrate loading pattern shown in FIG. 4, the second substrate loadingpattern shown in FIG. 5 and the third substrate loading pattern shown inFIG. 6, in order to monitor the thickness distribution of the films inthe wafer loading region 600 (i.e., the thickness uniformity between thefilms formed on the wafers in the wafer loading region 600). The filmsare formed, for example, according to the film-forming process(substrate processing) described later after the wafers 200 are loadedaccording to the first substrate loading pattern shown in FIG. 4, thesecond substrate loading pattern shown in FIG. 5 and the third substrateloading pattern shown in FIG. 6, respectively. In FIGS. 7 and 8,film-forming results for each case are shown for comparison. Comparingthe film-forming result when the wafers 200 are loaded according to thefirst substrate loading pattern shown in FIG. 4 (i.e., no large surfacearea wafer 601 is loaded in the wafer loading region 600) and thefilm-forming result when the wafers 200 are loaded according to thesecond substrate loading pattern shown in FIG. 5 (i.e., the total of 24large surface area wafers 601 are loaded collectively at the upperportion of the boat 217), a thickness of a film formed on the monitorwafer 602 loaded in the slot #75 is significantly thinner thanthicknesses of the films formed on the other monitor wafers 602 loadedin the other slots in case that the films are formed when the wafers 200are loaded according to the second substrate loading pattern, that is,the total of 24 large surface area wafers 601 are loaded collectively inthe vicinity of the slot #75. That is, the loading effect between thesubstrates greatly affects the film-forming when the wafers 200 areloaded according to the second substrate loading pattern. However, whenthe films are formed after the wafers 200 are loaded according to thethird substrate loading pattern, that is, the total of 24 large surfacearea wafers 601 are loaded dispersedly, a local film thickness reductiondue to the large surface area wafers 601 is not observed in the waferloading region 600. Thus, the thickness uniformity between the films inthe wafer loading region 600 is properly maintained.

Depending on the number of the large surface area wafers 601 to beloaded, there may be some cases where some of the large surface areawafers 601 are loaded in some slots that are less dispersed from otherlarge surface area wafers 601 because it is difficult to load all of thelarge surface area wafers 601 in a perfectly dispersed manner. However,in the embodiment, it is not necessary to load all of the large surfacearea wafers 601 in a perfectly dispersed manner. For the purpose ofobtaining the advantageous effects of the embodiment such as suppressingthe loading effect, it is sufficient to load the large surface areawafers 601 in a comparatively dispersed manner such that the ULAD inthat case is less than the ULAD in case the large surface area wafers601 are loaded not dispersedly (i.e., loaded collectively).

FIG. 9 schematically illustrates a fourth substrate loading patternaccording to the embodiment. The fourth substrate loading pattern isapplied to a case where a substrate transfer mechanism (not shown)having a function of suitably selecting an operation mode between asingle substrate transfer mode (i.e., a mode for transferring asubstrate individually at a time) and a 5-substrates batch transfer mode(i.e., a mode for transferring a total of 5 substrates at a time) isused to transfer the wafers 200. For shortening the time fortransferring a total of 19 large surface area wafers 601, the5-substrates batch transfer mode is used as many times as possible, andthe remaining wafers less than 5 is transferred using the singlesubstrate transfer mode. The total of 19 large surface area wafers 601are loaded dispersedly in the wafer loading region 600 according to thefourth substrate loading pattern using the above-described substratetransfer mechanism such that the density distribution of the largesurface area substrate is flattened compared with the densitydistribution of the large surface area substrate when the 19 largesurface area wafers 601 are loaded not dispersedly (i.e., loadedcollectively). According to the fourth substrate loading pattern, eachsubgroup of the large surface area wafers 601 is loaded near the centerportion of two monitor wafers 602 closest thereto. Further, FIG. 10schematically illustrates a fifth substrate loading pattern where all ofthe 19 large surface area wafers 601 are loaded collectively at theupper end portion of the wafer loading region 600 of the boat 217. Thatis, all of the 19 large surface area wafers 601 are loaded in a seriesof slots provided consecutively at the upper end portion of the waferloading region 600. In FIGS. 11 and 12, film-forming results for eachcase are shown for comparison.

Referring to FIG. 9, the total of 19 large surface area wafers 601 areloaded dispersedly in the wafer loading region 600 such that 5 of themare loaded between the slots #75 and #100, 5 of them between the slots#50 and #75, 5 of them between the slots #25 and #50 and the remaining 4of them between the slots #0 and #25 according to the fourth substrateloading pattern. Comparing the film-forming results between the fourthsubstrate loading pattern shown in FIG. 9 and the fifth substrateloading pattern shown in FIG. 10, a local film thickness reduction isnot observed and a favorable thickness uniformity between the films inthe wafer loading region 600 is achieved according to the fourthsubstrate loading pattern.

Next, a result of examining an influence on the thickness distributionof the films by changing the number of the large surface area wafers 601included in each subgroup of the large surface area wafers 601 will bedescribed. The monitor wafers 602 are inserted between the large surfacearea wafers 601, and the relationship between the number of the largesurface area wafers 601 included in each subgroup of the large surfacearea wafers 601 and the thickness distribution of the films between thesubgroups of the large surface area wafers 601 is examined. FIG. 13schematically illustrates a sixth substrate loading pattern according tothe embodiment, where a total of 8 large surface area wafers 601 areloaded in the wafer loading region 600 of the batch processing apparatuscapable of accommodating 100 wafers (i.e., 100 slots are provided in thewafer loading region 600 of the batch processing apparatus). Accordingto the sixth substrate loading pattern, three monitor wafers 602 arerespectively loaded immediately above, immediately below and in themiddle of a region where the 8 large surface area wafers 601 are loaded.FIG. 14 schematically illustrates a seventh substrate loading patternaccording to the embodiment, where a total of 4 large surface areawafers 601 are loaded in the wafer loading region 600 of the batchprocessing apparatus described above. According to the seventh substrateloading pattern, the monitor wafers 602 are loaded immediately above,immediately below and in the middle of a region where the 4 largesurface area wafers 601 are loaded. In FIGS. 15 and 16, film-formingresults for each case are shown for comparison.

Comparing, with reference to FIG. 15, the results between the sixthsubstrate loading pattern where each subgroup consists of 8 largesurface area substrates 601 and the seventh substrate loading patternwhere each subgroup consists of 4 large surface area substrates 601, thedifferences between the film thickness of the monitor wafer 602 loadedin the center portion and the film thicknesses of the monitor wafers 602loaded immediately above and immediately below the large surface areawafers 601 are reduced according to the seventh substrate loadingpattern. That is, the reduction of the film thickness at the centerportion of a region where the subgroup of the large surface area wafers601 are loaded can be suppressed as compared with the film thicknessesat the end portions of the region where the subgroup of the largesurface area wafers 601 are loaded when the large surface area wafers601 are loaded according to the seventh substrate loading pattern. Inorder to improve the thickness uniformity between the films in thesubgroups of the large surface area wafers 601 in case of dispersedloading, it is preferable to reduce the number of the large surface areawafers 601 included in each subgroup and increase the number of thesubgroups as long as the number of the wafers 200 does not exceed thenumber of the slots in the wafer loading region 600.

As described above, there is a trade-off between the shortening of thetransfer time and the improvement of the ULAD. When the shortening ofthe transfer time is prioritized, the large surface area wafers 601 maybe arranged for that purpose while sacrificing the film thicknessuniformity between the subgroup of the large surface area wafers 601 andthe ULAD of the wafer loading region 600. The trade-off between theuniformity and the shortening of the transfer time can be appropriatelyadjusted depending on which is prioritized. The advantageous effects ofthe embodiment can be obtained by loading the large surface area wafers601 dispersedly such that the ULAD becomes smaller than the case wherethe large surface area wafers 601 are loaded not dispersedly.

Next, an influence of distances between each monitor wafer 602 and thelarge surface area wafers 601 will be described. FIG. 17 schematicallyillustrates an eighth substrate loading pattern that each subgroup ofthe large surface area wafers 601 is loaded in a slot immediately beloweach of monitor wafers 602. FIG. 18 schematically illustrates a ninthsubstrate loading pattern that each subgroup of the large surface areawafers 601 is loaded in a slot immediately above each of monitor wafers602. In FIG. 19, film-forming results for each case shown in FIGS. 17and 18 are shown for comparison, with the film-forming result accordingto the first substrate loading pattern shown in FIG. 4 (where no largesurface area wafer 601 is loaded in the wafer loading region 600) andthe film-forming result according to the fourth substrate loadingpattern shown in FIG. 9 (where each subgroup of the large surface areawafers 601 is loaded near the center of the two closest monitor wafers602).

When each subgroup of the large surface area wafers 601 is loadedimmediately below the monitor wafer 602 closest thereto as in the eighthsubstrate loading pattern, the distance between the monitor wafer 602 ofthe slot #1 and the large surface area wafer 601 closest thereto islonger than the distance between each of the monitor wafers 602 of theslots #100, #75, #50 and #25 and the large surface area wafer 601closest thereto. Therefore, for the monitor wafer 602 of the slot #1, arate of reducing the film thickness due to the presence of the largesurface area wafers 601 can be lowered. That is, the amount of reductionin the film thickness on the monitor wafer 602 of the slot #1 is smallerthan those of the other slots #100, #75, #50 and #25. As a result, thefilm formed on the monitor wafer 602 of slot #1 becomes thicker than thefilms formed on the monitor wafers 602 of the other slots. Therefore,the difference between the film thickness of the monitor wafer 602 ofslot #1 according to the eighth substrate loading pattern and the filmthickness of the monitor wafer 602 of slot #1 when no large surface areawafer 601 is loaded in the wafer loading region 600 becomes smaller thanthe difference between the film thickness of each of the monitor wafers602 of the other slots according to the eighth substrate loading patternand the film thicknesses of each of the monitor wafers 602 of the otherslots when no large surface area wafer 601 is loaded in the waferloading region 600.

Further, when each subgroup of the large surface area wafers 601 isloaded immediately above the monitor wafer 602 closest thereto as in theninth substrate loading pattern, the distance between the monitor wafer602 of the slot #100 and the large surface area wafer 601 closestthereto is longer than the distance between each of the monitor wafers602 of the slots #75, #50, #25 and #1 and the large surface area wafer601 closest thereto. Therefore, for the monitor wafer 602 of the slot#100, a rate of reducing the film thickness due to the presence of thelarge surface area wafers 601 can be lowered. That is, the amount ofreduction in the film thickness on the monitor wafer 602 of the slot#100 is smaller than those of the other slots #75, #50, #25 and #1. As aresult, the film formed on the monitor wafer 602 of slot #100 becomesthicker than the films formed on the monitor wafers 602 of the otherslots. Therefore, the difference between the film thickness of themonitor wafer 602 of slot #100 according to the ninth substrate loadingpattern and the film thickness of the monitor wafer 602 of slot #100when no large surface area wafer 601 is loaded in the wafer loadingregion 600 becomes smaller than the difference between the filmthickness of each of the monitor wafers 602 of the other slots accordingto the ninth substrate loading pattern and the film thicknesses of eachof the monitor wafers 602 of the other slots when no large surface areawafer 601 is loaded in the wafer loading region 600.

However, when calculating the uniformity of film thickness of the waferloading region 600 from the film thicknesses of the monitor wafers 602,variations in the numerical value of the uniformity will occur when thedistance between each monitor wafer 602 and the large surface area wafer601 closest thereto is not unified (not constant). Thus, the assessmentand management of the thickness uniformity between the films may becomedifficult.

When each subgroup of the large surface area wafers 601 are loaded inthe central regions between the two monitor wafers 602 closest theretoas in the fourth substrate loading pattern and the distance between themonitor wafer 602 in each slot and the large surface area wafer 601closest thereto is substantially equalized (i.e., vary minimally), theamount of reduction in the film thickness of the monitor wafer 602 ineach slot becomes equal or nearly equal. As a result, the differencebetween the film thickness of the monitor wafer 602 according to thefourth substrate loading pattern and the film thickness of the monitorwafer 602 when no large surface area wafer 601 is loaded according tothe first substrate loading pattern becomes equal or nearly equal ineach slot, and the thickness distribution of the films formed on thewafers 200 according to the fourth substrate loading pattern becomessimilar to that of the wafers 200 when no large surface area wafer 601is loaded according to the first substrate loading pattern. Thus, theassessment and management of the uniformity of the film thickness canbecome easier. Therefore, when inserting (loading) a plurality ofmonitor wafers 602 into the wafer loading region 600, it is preferablethat the distance between each monitor wafer 602 and the large surfacearea wafers 601 remains constant by loading the subgroups of the largesurface area wafers 601 in the central regions between the two closestmonitor wafers 602.

FIG. 20 shows the relationship between the ULAD and the number thewafers when the wafers are not loaded dispersedly. In FIG. 20, the ULADvalue when the large surface area wafers 601 are loaded collectively atthe upper portion of the wafer loading region 600 when the number X ofthe slots of the wafer loading region 600 is equal to or greater than 25and equal to or less than 200. The advantageous effects of the presentembodiment can be obtained by loading the large surface area wafers 601in a dispersed manner such that the ULAD is adjusted to be smaller thanthe ULAD indicated in FIG. 20 according to the number X of the slots ofthe wafer loading region 600.

FIG. 21 shows the ULAD when the large surface area wafers 601 are loadeddispersedly in various manners with the number X of the slots of thewafer loading region 600 is 100. In FIG. 21, “DISPERSED LOADING AT UPPEREND” indicates that the large surface area wafers 601 are loadedcollectively at the upper end of the wafer loading region 600 instead ofbeing loaded dispersedly.

In FIG. 21, “DISPERSED LOADING (PRIORITY ON TRANSFERRING 5 WAFERS) TYPE#1” and “DISPERSED LOADING (PRIORITY ON TRANSFERRING 5 WAFERS) TYPE #2”indicate that the substrate transfer mechanism (not shown) transfers 5wafers at a time among the wafers 200 including the large surface areawafers 601 and the fill-dummy wafers 603, and the large surface areawafers 601 are loaded dispersedly as follows, respectively. When thenumber X of the slots of the wafer loading region 600 is 100 and thenumber P of the large surface area wafers 601 to be loaded in the waferloading region 600 is 90, then the number FD of the fill-dummy wafers603 to be loaded in the wafer loading region 600 is 10. When 5 largesurface area wafers 601 are considered as one set, there are 18 sets ofthe large surface area wafers 601. When 5 fill-dummy wafers 603 areconsidered as one set, there are 2 sets of the large surface area wafers601. A basic unit refers to the sum of the number of slots where thefill-dummy wafers 603 are loaded at a time (i.e., the number of thefill-dummy wafers 603 transferred at a time) by the substrate transfermechanism and the number of slots where the large surface area wafers601 are loaded at a time (i.e., the number of the large surface areawafers 601 transferred at a time) by the substrate transfer mechanism.That is, a basic unit is constituted by 5 fill-dummy wafers 603 and 5large surface area wafers 601. When the number P of the large surfacearea wafers 601 is 90, there are only 2 basic units, and sixteen (16)sets of the large surface area wafers 601 cannot constitute basic unitsbecause the number of the fill-dummy wafers 603 is insufficient. In thiscase, the insufficient fill-dummy wafers 603 are pulled out one by onefrom each basic unit sequentially from the upper portion of the waferloading region 600 so as to load the basic units dispersedly. In theembodiment, “DISPERSED LOADING (PRIORITY ON TRANSFERRING 5 WAFERS) TYPE#1” indicates that the large surface area wafers 601 are aligned andloaded at an upper end of the basic unit and “DISPERSED LOADING(PRIORITY ON TRANSFERRING 5 WAFERS) TYPE #2” indicates that the largesurface area wafers 601 are aligned and loaded at a lower end of thebasic unit.

In FIG. 21, “DISPERSED LOADING (PRIORITY ON ULAD) TYPE #1”, “DISPERSEDLOADING (PRIORITY ON ULAD) TYPE #2” and “DISPERSED LOADING (PRIORITY ONULAD) TYPE #3” indicate that the improvement of ULAD is prioritized,thus the number of wafers transferred by the substrate transfermechanism (not shown) is not predetermined. According to “DISPERSEDLOADING (PRIORITY ON ULAD) TYPE #1”, “DISPERSED LOADING (PRIORITY ONULAD) TYPE #2” and “DISPERSED LOADING (PRIORITY ON ULAD) TYPE #3”, thelarge surface area wafers 601 are loaded dispersedly as follows,respectively. When the number P of the large surface area wafers 601 tobe loaded in the wafer loading region 600 is 90, then the number FD ofthe fill-dummy wafers 603 to be loaded in the wafer loading region 600is 10. Then, the ratio of P to FD is 9.0, and a basic unit isconstituted by 1 fill-dummy wafer 603 and 9 large surface area wafers601. When the number P is 90 and the number FD is 10, 10 basic units areconstituted by the fill-dummy wafers 603 and the large surface areawafers 601, and none of the fill-dummy wafers 603 and the large surfacearea wafers 601 is remained without constituting the basic set. Whensome of the fill-dummy wafers 603 and the large surface area wafers 601are remained without constituting the basic set, for example, when thenumber P is 85 and the number FD is 10, 5 fill-dummy wafers 603 areinsufficient to constituting the basic sets. In this case, the largesurface area wafers 601 are pulled out one by one from the basic unitssequentially from the lower portion of the wafer loading region 600 soas to load the basic units dispersedly. In the embodiment, “DISPERSEDLOADING (PRIORITY ON ULAD) TYPE #1” indicates that the large surfacearea wafers 601 are aligned and loaded at an upper end of the basicunit, “DISPERSED LOADING (PRIORITY ON ULAD) TYPE #2” indicates that thelarge surface area wafers 601 are aligned and loaded at a lower end ofthe basic unit, and “DISPERSED LOADING (PRIORITY ON ULAD) TYPE #3”indicates that the large surface area wafers 601 are aligned and loadedat a center portion of the basic unit.

According to each of the disperse loading methods described above, alower ULAD is obtained as compared with the case when the large surfacearea wafers 601 are loaded collectively (not loaded dispersedly).

Next, a method of forming a film having a desired thickness will bedescribed. According to the method, a film having a desired thicknesscan be formed by automatically correcting a rate of reduction of theaverage film thickness between the wafers 200 is decreased as the largesurface area wafers 601 are loaded in the wafer loading region 600. Forexample, by automatically correcting the rate, even if the total surfacearea of the large surface area wafers 601 loaded in the wafer loadingregion 600 varies with each batch, it is possible to form the film witha constant thickness.

FIG. 8 is a graph showing thickness distributions of films in the waferloading region 600 by normalized film thicknesses. Referring to FIG. 8,when the large surface area wafers 601 are loaded, even when the largesurface area wafers 601 are loaded dispersedly, the film thicknessesdecreases in the wafer loading region 600 compared with the case when nolarge surface area wafer 601 is loaded in the wafer loading region 600.As the surface area of each large surface area wafer 601 increases, theamount of the film thickness reduction increases. Further, as the numberof the large surface area wafers 601 loaded in the wafer loading region600 increases, the amount of the film thickness reduction increases.That is, as a total surface area of the large surface area wafers 601increases, the amount of the film thickness reduction increases.Therefore, a film having a desired thickness can be formed on the wafers200 to be processed by obtaining in advance the relationship between thetotal surface area of the large surface area wafers 601 and the amountof the film thickness reduction and correcting the number of times ofthe cycles for alternately supplying a plurality of process gases. Thatis, even if the total surface area of the large surface area wafers 601varies with each batch, it is possible to form a film having a constantfilm thickness on the wafers 200 to be processed without being affectedby the change of the total surface area.

Specifically, the total surface area is obtained by multiplying thesurface area of each large surface area wafer 601 by the number of thelarge surface area wafers 601 to be loaded in the wafer loading region600. The relationship between the total surface area and the amount ofthe film thickness reduction is obtained in advance. The additionalnumber of times of the cycle forming the film having the desired filmthickness is obtained in advance. Accordingly, a correlation table ofthe total surface area and the additional number of times of the cyclecan be created. According to the embodiment, the controller has afunction of determining the number of times of the cycle forming thefilm. Specifically, when the film-forming process described later isstarted, the surface area of each large surface area wafer 601 isinputted to the controller 121 by the input/output device 122 in advanceand the number of the large surface area wafers 601 loaded in the waferloading region 600 is automatically recognized by the controller 121.The total surface area of the large surface area wafers 601 isautomatically calculated by the controller 121. The controllerdetermines the number of times of the cycle appropriately byautomatically reading the additional number of times of the cycle fromthe correlation table. Therefore, it is possible to form a film having adesired thickness on the substrate to be processed (i.e., the wafers200) without being affected by the total surface area of the largesurface area wafers 601.

Alternatively, a correlation table of the additional number of times ofthe cycle may be created only by the relationship between the number oflarge surface area wafers 601 and the amount of the film thicknessreduction, and the correlation table may be prepared for differentsurface areas of each large surface area wafer 601. In this case, whenthe film-forming process described later is started, according to thesurface area of each large surface area wafer 601 to be processed, acorrelation table of the additional number of times of the cycle isdesignated from the input/output device 122 to the controller 121(similar to designating a recipe described late by the controller 121).The number of the large surface area wafers 601 loaded in the waferloading region 600 is automatically recognized by the controller 121.The same effect as described above can be obtained according to thiscase.

(3) Film-Forming Process

Next, an exemplary sequence of forming films on the wafers 200, which isa part of the substrate processing for manufacturing a semiconductordevice, using the substrate processing apparatus 10 will be describedwith reference to FIG. 23. Herein, the components of the substrateprocessing apparatus 10 are controlled by the controller 121.

In this specification, “wafer” may refer to “a wafer itself” or refer to“a wafer and a stacked structure (aggregated structure) of predeterminedlayers or films formed on the surface of the wafer”. In thisspecification, “surface of wafer” refers to “a surface (exposed surface)of” a wafer itself or “the surface of a predetermined layer or filmformed on the wafer, i.e. the top surface of the wafer as a stackedstructure”.

Thus, in this specification, “supplying a predetermined gas onto awafer” may refer to “supplying a predetermined gas onto a surface(exposed surface) of the wafer itself” or refer to “supplying apredetermined gas onto patterns such as a layer and a film formed on thewafer”, i.e. “supplying a predetermined gas onto a top surface of thewafer as a stacked structure”. In this specification, “forming apredetermined layer (or film) on a wafer” may refer to “forming apredetermined layer (or film) on a surface (exposed surface) of thewafer itself” or refer to “forming a predetermined layer (or film) on asurface of a layer or a film formed on the wafer”, i.e. “forming apredetermined layer (or film) on a top surface of the wafer as a stackedstructure”.

In this specification, “wafer” is an example of a “substrate.”Hereinafter, a method of manufacturing a semiconductor device accordingto the embodiment will be described in detail.

Wafer Charging and Boat Loading Step

After the wafers 200 are loaded (charged) into the boat 217 (wafercharging), the shutter 219 s is moved by the shutter opening/closingmechanism 115 s and the lower end opening of the manifold 209 is opened(shutter opening). As shown in FIG. 1, the boat 217 charged with thewafers 200 is lifted by the boat elevator 115 and loaded into theprocess chamber 201 (boat loading). With the boat 217 loaded, the sealcap 219 seals the lower end of the manifold 209 through the O-ring 220b.

Pressure and Temperature Adjusting Step

The vacuum pump 246 vacuum-exhausts the process chamber 201 such thatthe inner pressure of the process chamber 201, that is, the pressure ofthe space in which the wafers 200 are present is set to a desiredpressure (vacuum degree). The inner pressure of the process chamber 201is measured by the pressure sensor 245, and the APC valve 243 isfeedback controlled based on the measured pressure (pressure adjusting).Until at least the process for the wafers 200 is completed, the vacuumpump 246 continuously exhausts the process chamber 201. The heater 207heats the process chamber 201 such that the internal temperature of theprocess chamber 201 becomes a desired temperature. The amount ofelectricity conducted to the heater 207 is feedback controlled based onthe temperature detected by the temperature sensor 263, such that theinternal temperature of the process chamber 201 has a desiredtemperature distribution (temperature adjusting). Until at least theprocess for the wafers 200 is completed, the heater 207 continuouslyheats the process chamber 201. Thereafter, the rotating mechanism 267starts to rotate the boat 217 and the wafers 200. Until at least theprocess for the wafers 200 is completed, the rotating mechanism 267continuously rotates the boat 217 and the wafers 200.

Film-Forming Step

Next, the film-forming step is performed by performing a source gassupply step, a first residual gas removing step, a reactive gas supplystep and a second residual gas removing step sequentially.

Source Gas Supply Step

The valve 314 is opened to supply the TiCl₄ gas into the gas supply pipe310. After the flow rate of the TiCl₄ gas is adjusted by the MFC 312,the TiCl₄ gas is supplied onto the wafers 200 through the plurality ofgas supply holes 410 a of the nozzle 410. That is, the wafers 200 areexposed to the TiCl₄ gas. Then, the TiCl₄ gas is exhausted through theexhaust pipe 231. Simultaneously, the valve 514 may be opened to supplyN₂ gas serving as a carrier gas into the gas supply pipe 510. After theflow rate of the N₂ gas is adjusted by the MFC 512, the N₂ gas issupplied with the TiCl₄ gas into the process chamber 201 through theplurality of gas supply holes 410 a of the nozzle 410, and exhaustedthrough the exhaust pipe 231.

In order to prevent the TiCl₄ gas from entering the nozzle 420, thevalve 524 may be opened to supply N₂ gas into the gas supply pipe 520.The N₂ gas is supplied into the process chamber 201 through the gassupply pipe 520 and the nozzle 420, and exhausted through the exhaustpipe 231.

In the source gas supply step, the APC valve 243 is controlled to adjustthe inner pressure of the process chamber 201. For example, the innerpressure of the process chamber 201 may range from 1 Pa to 1,330 Pa,preferably from 10 Pa to 931 Pa, more preferably from 20 Pa to 399 Pa.When the inner pressure of the process chamber 201 is higher than 1,330Pa, a residual gas may not be sufficiently purged. As a result,by-products may be taken into the film and the resistance of the filmincreases. When the inner pressure of the process chamber 201 is lowerthan 1 Pa, sufficient reaction rate of the TiCl₄ cannot be obtained. Inthis specification, “from 1 Pa to 1,000 Pa” refers to “1 Pa or higherand 1,000 Pa or lower.” That is, the range “from 1 Pa to 1,000 Pa”includes 1 Pa and 1,000 Pa. The same also applies to other numericalranges herein such as flow rate, time and temperature.

For example, the flow rate of the TiCl₄ gas adjusted by the MFC 312 mayrange from 0.01 slm to 1.0 slm, preferably from 0.1 slm to 0.7 slm, morepreferably from 0.2 slm to 0.5 slm. When the flow rate of the TiCl₄ gasadjusted by the MFC 312 is higher than 1.0 slm, the TiCl₄ gas may bereliquefied in the gas supply pipe 310. When the flow rate of the TiCl₄gas adjusted by the MFC 312 is lower than 0.01 slm, the throughput maydeteriorate.

For example, the flow rate of the N₂ gas is adjusted by the MFC 512 suchthat the total flow rate in the nozzle 410 may range from 0.01 slm to 50slm, preferably from 0.1 slm to 20 slm, more preferably from 0.2 slm to10 slm. For example, the flow rate of the N₂ gas adjusted by the MFC 512may range from 0 slm to 49 slm, preferably from 0 slm to 19.3 slm, morepreferably from 0 slm to 9.5 slm. When the total flow rate in the nozzle410 is higher than 50 slm, the gas adiabatically expands in theplurality of gas supply holes 410 a and may be reliquefied. When theflow rate of the TiCl₄ gas is lower than that of the desired throughput,the flow rate of the N₂ gas may be increased. By supplying the N₂ gas,the TiCl₄ gas supplied through the plurality of gas supply holes 410 acan be uniformly supplied onto the wafers 200.

The time duration of supplying the TiCl₄ gas onto the wafers 200 mayrange from 1 second to 300 seconds, preferably from 1 second to 60seconds, and more preferably from 1 second to 10 seconds. When the timeduration of supplying the TiCl₄ gas is longer than 300 seconds, thethroughput may deteriorate and the operation cost may increase. When thetime duration of supplying the TiCl₄ gas is shorter than 1 second, theexposure amount of the TiCl₄ gas required for the film-forming may notbe sufficiently obtained.

For example, the heater 207 heats the process chamber 201 such that thetemperature of the wafers 200 may range from 200° C. to 700° C.,preferably 300° C. to 600° C., more preferably 380° C. to 525° C. Whenthe temperature of the wafers 200 is higher than 700° C., the thermalbudget becomes a value outside the allowable range. When the temperatureof the wafers 200 is lower than 200° C., the reactivity is low and thefilm may not be formed.

By supplying the TiCl₄ gas into the process chamber 201 under theabove-described conditions, a titanium-containing layer is formed on thetop surface of the wafer 200.

First Residual Gas Removing Step

After the titanium-containing layer is formed on the wafers 200, thevalve 314 is closed to stop the supply of the TiCl₄ gas. With the APCvalve 243 open, the vacuum pump 246 vacuum-exhausts the inside of theprocess chamber 201 to remove residual TiCl₄ gas which did not react orwhich contribute to the formation of the titanium-containing layer fromthe process chamber 201. By maintaining the valves 514 and 524 open, theN₂ gas is continuously supplied into the process chamber 201. The N₂ gasacts as a purge gas, which improves the efficiency of removing theresidual TiCl₄ gas which did not react or which contribute to theformation of the titanium-containing layer from the process chamber 201.

Reactive Gas Supply Step

After the residual gas in the process chamber 201 is removed, the valve324 is opened to supply the NH₃ gas into the gas supply pipe 320. Afterthe flow rate of the NH₃ gas is adjusted by the MFC 322, the NH₃ gas issupplied onto the wafers 200 through the plurality of gas supply holes420 a of the nozzle 420. That is, the wafers 200 are exposed to the NH₃gas. Then, the NH₃ gas is exhausted through the exhaust pipe 231.Simultaneously, the valve 524 may be opened to supply the N₂ gas intothe gas supply pipe 520. After the flow rate of the N₂ gas is adjustedby the MFC 522, the N₂ gas is supplied with the NH₃ gas into the processchamber 201 through the plurality of gas supply holes 420 a of thenozzle 420, and exhausted through the exhaust pipe 231. In order toprevent the NH₃ gas from entering the nozzle 410, the valve 514 may beopened to supply the N₂ gas into the gas supply pipe 510. The N₂ gas issupplied into the process chamber 201 through the gas supply pipe 510and the nozzle 410, and exhausted through the exhaust pipe 231.

In the reactive gas supply step, the APC valve 243 is controlled toadjust the inner pressure of the process chamber 201. For example, theinner pressure of the process chamber 201 may range from 1 Pa to 1,330Pa, preferably from 10 Pa to 2,660 Pa, more preferably from 20 Pa to1,330 Pa. When the inner pressure of the process chamber 201 is higherthan 1,330 Pa, a time for performing the second residual gas removingstep described later is increased and the throughput may deteriorate.When the inner pressure of the process chamber 201 is lower than 1 Pa,the exposure amount of the NH₃ gas required for the film-forming may notbe sufficiently obtained.

For example, the flow rate of the NH₃ gas adjusted by the MFC 322 mayrange from 1 slm to 50 slm, preferably from 3 slm to 20 slm, morepreferably from 5 slm to 10 slm. When the flow rate of the NH₃ gasadjusted by the MFC 322 is higher than 50 slm, the time for performingthe second residual gas removing step described later is increased andthe throughput may deteriorate. When the flow rate of the NH₃ gasadjusted by the MFC 322 is lower than 1 slm, the exposure amount of theNH₃ gas required for the film-forming may not be sufficiently obtained.

For example, the flow rate of the N₂ gas is adjusted by the MFC 522 suchthat the total flow rate in the nozzle 420 may range from 1 slm to 50slm, preferably from 3 slm to 20 slm, more preferably from 5 slm to 10slm. For example, the flow rate of the N₂ gas adjusted by the MFC 522may range from 0 slm to 49 slm, preferably from 0 slm to 17 slm, morepreferably from 0 slm to 9.5 slm. When the total flow rate in the nozzle420 is higher than 50 slm, the time for performing the second residualgas removing step described later is increased and the throughput maydeteriorate. When the total flow rate in the nozzle 420 is lower than 1slm, the exposure amount of the NH₃ gas required for the film-formingmay not be sufficiently obtained.

The time duration of supplying the NH₃ gas onto the wafers 200 may rangefrom 1 second to 120 seconds, preferably from 5 second to 60 seconds,and more preferably from 5 second to 10 seconds. When the time durationof supplying the NH₃ gas is longer than 120 seconds, the throughput maydeteriorate and the operation cost may increase. When the time durationof supplying the NH₃ gas is shorter than 1 second, the exposure amountof the NH₃ gas required for the film-forming may not be sufficientlyobtained. The other process conditions of the reactive gas supply stepare the same as those of the above-described source gas supply step.

In the reactive gas supply step, only the NH₃ gas and the inert gas (N₂gas) are supplied into the process chamber 201. The NH₃ gas reacts withat least a portion of the titanium-containing layer formed on the wafers200 in the source gas supply step to form a titanium nitride layer (TiNlayer) containing titanium (Ti) and nitrogen (N). That is, thetitanium-containing layer is modified into the TiN layer.

Second Residual Gas Removing Step

After the TiN layer is formed, the valve 324 is closed to stop thesupply of the NH₃ gas. Residual NH₃ gas which did not react or whichcontribute to the formation of the TiN layer and reaction by-productsremaining in the process chamber 201 are exhausted from the processchamber 201 in the same manner as in the first residual gas removingstep.

Performing Predetermined Number of Times

By performing a cycle wherein the source gas supply step, the firstresidual gas removing step, the reactive gas supply step and the secondresidual gas removing step are performed non-simultaneously in order apredetermined number of times (one or more times), a titanium nitridefilm (TiN film) is formed on the wafer 200. The predetermined number oftimes is appropriately selected according to the target thickness of theTiN film. However, it is preferable that the cycle is performed aplurality of times. For example, the target thickness of the TiN filmmay range from 0.5 nm to 3 m, preferably from 0.8 nm to 2 m, morepreferably from 1 nm to 1 km. By setting the target thickness of the TiNfilm to 3 m or less, it is possible to prevent the adhesion between theboat 217 and the wafer 200 by the TiN film (deposited film) formed onthe wafer 200. By setting the target thickness of the TiN film to 0.5 nmor more, it is possible to form a continuous TiN film because gapsgenerated by the formation of TiN in an island shape at the initialstage of the film-forming is almost removed.

Purging and Returning to Atmospheric Pressure Step

After the film-forming step is completed, the valves 514 and 524 areopened to supply the N₂ gas. The N₂ gas is supplied into the processchamber 201 through each of the gas supply pipes 310 and 320, and thenexhausted through the exhaust pipe 231. The N₂ gas acts as a purge gas.The gas or the reaction by-products remaining in the process chamber 201are removed from the process chamber 201 (purging). Thereafter, theinner atmosphere of the process chamber 201 is replaced with the inertgas (substitution by N₂ gas), and the inner pressure of the processchamber 201 is returned to atmospheric pressure (returning toatmospheric pressure).

Boat Unloading and Wafer Discharging Step

Thereafter, the seal cap 219 is lowered by the boat elevator 115 and thelower end of the manifold 209 is opened. The boat 217 with the processedwafers 200 charged therein is unloaded from the reaction tube 203through the lower end of the manifold 2093 (boat unloading). After theboat is unloaded, the shutter 219 s is moved. The lower end of themanifold 209 is sealed by the shutter 219 s through the O-ring 220 c(shutter closing). The processed wafers 200 are taken out of thereaction tube 203 and then unloading (discharged) from the boat 217(wafer discharging).

Effects According to the Embodiment

According to the embodiment, one or more advantageous effects describedbelow are provided.

(a) When loading and processing less than X number of large surface areasubstrates by using a batch processing apparatus provided with asubstrate loading region capable of loading X wafers (herein, X is anatural number equal to or greater than three and represents the maximumnumber of the substrates can be loaded in the substrate loading region),a density distribution of the large surface area substrate in thesubstrate loading region can be flattened by loading large surface areasubstrates dispersedly in the substrate loading region. Thus, it ispossible to improve the thickness uniformity between the films formed onthe substrates in the substrate loading region.

(b) When loading and processing less than X number of large surface areasubstrates by using a batch processing apparatus provided with asubstrate loading region capable of loading X wafers (X is a naturalnumber equal to or greater than three), the large surface area substrateare loaded dispersedly such that a uniformity of the densitydistribution of the large surface area substrate is small compared withthe case where the large surface area substrate are collectively loaded(i.e., not loaded dispersedly). When 25≤X≤200, the uniformity of thedensity distribution of the large surface area substrate is calculatedbased on the average of the large surface area substrate density valuesof a total of 11 slots including a given slot and 10 slots closest tothe slot. When 11≤X≤24, the uniformity of the density distribution ofthe large surface area substrate is calculated based on the average ofthe large surface area substrate density values of a total of 5 slotsincluding a given slot and 4 slots closest to the slot. When 5≤X≤10, theuniformity of the density distribution of the large surface areasubstrate is calculated based on the average of the large surface areasubstrate density values of a total of 3 slots including a given slotand 2 slots closest to the slot. Thus, the density distribution of thelarge surface area substrate in the substrate loading region can befurther flattened.

(c) It is possible to improve a uniformity of the density distributionof the subgroups of large surface area substrate by increasing thenumber of the subgroups of the large surface area substrates as many aspossible (i.e., reducing the number of the large surface area substratesincluded in a single subgroup of the large surface area substrates), aslong as the number of the substrates does not exceed the number of theslots in the substrate loading region.

(d) By increasing a distance between two closest subgroups of the largesurface area substrates or the number of slots where the large surfacearea substrates are not loaded, as long as the number of the substratesdoes not exceed the number of the slots in the substrate loading region,the density distribution of the large surface area substrate in thesubstrate loading region can be further flattened.

(e) When a substrate transfer mechanism having a function of suitablyselecting an operation mode between a single substrate transfer mode(i.e., a mode for transferring a substrate individually at a time) and a5-substrates batch transfer mode (i.e., a mode for transferring a totalof 5 substrates at a time) is used to transfer the substrates, the largesurface area substrates may be loaded in a dispersed manner according tosuch substrate loading pattern that maximizes the number of using the5-substrates batch transfer mode to flatten the density distribution oflarge surface area substrate in the substrate loading region comparedwith the case where the large surface area substrate are collectivelyloaded (i.e., not loaded dispersedly). In this manner, it is possible toimprove the uniformity of the density distribution of large surface areasubstrate while shortening the transfer time required for transferringthe large surface area substrates.

(f) When inserting monitor substrates into the substrate loading region,by keeping the distance between each monitor substrate and the largesurface area substrate closest thereto to be constant, the amount ofreduction in the film thickness due to the distances between eachmonitor substrate and the large surface area substrates can be adjustedto be equal or nearly equal between the substrates in the substrateloading region. Thus, it possible to improve the easiness of theassessment and the management of the uniformity of the film thicknessbetween the substrates in the substrate loading region using the monitorsubstrates.

(g) When the batch processing apparatus provided with the substrateloading region capable of loading X wafers (X is a natural number equalto or greater than three) is used to process the large surface areasubstrates less than X, by inputting a surface area of a single largesurface area substrate in advance, the number of times of the cycles foralternately supplying a plurality of process gases can be automaticallycorrected based on a total surface area of the large surface areasubstrates changed by at least one of a surface area of a single largesurface area substrate and the number of the large surface areasubstrates loaded in the substrate loading region. Thus, it is possibleto form a film having a constant film thickness on the large surfacearea substrates even if the total surface area of the large surface areasubstrates varies with each batch.

(h) When the large surface area substrates are processed by the batchprocessing apparatus, the influence of at least one of the surface areaof the single large surface area substrate and the number of the largesurface area substrates loaded in the substrate loading region can bereduced. Thus, it is possible to achieve the uniformity of the filmthickness between the substrates in the substrate loading region withappropriate value, and to form a film having a desired thickness on thesubstrates to be processed.

OTHER EMBODIMENTS

While the technique is described by way of the above-describedembodiment and examples, the above-described technique is not limitedthereto. The above-described technique may be modified in various wayswithout departing from the gist thereof.

For example, according to the above-described embodiment, the TiCl₄ gasis used as the titanium-containing gas. However, the above-describedtechnique is not limited thereto. Instead of the TiCl₄ gas, for example,various gases such as tetrakis dimethylamino titanium (Ti[N(CH₃)₂]₄,abbreviated as TDMAT), tetrakis diethylamino titanium (Ti[N(CH₂CH₃)₂]₄,abbreviated as TDEAT) and titanium tetraiodide (TiI₄) may be used as thetitanium-containing gas. According to the above-described embodiment,the NH₃ gas is used as the nitrogen-containing gas. However, theabove-described technique is not limited thereto. Instead of the NH₃gas, for example, various gases such as N₂, nitrous oxide (NO) andnitrogen oxide (N₂O) may be used as the nitrogen-containing gas.Further, various gases such hydrazine, monomethylhydrazine,dimethylhydrazine, trimethylamine, dimethylamine, monomethylamine,triethylamine, diethylamine and monoethylamine may be used as thenitrogen-containing gas. According to the above-described embodiment,the N₂ gas is used as the inert gas. However, the above-describedtechnique is not limited thereto. Instead of the N₂ gas, for example,rare gases such as argon (Ar) gas, helium (He) gas, neon (Ne) gas,krypton (Kr) gas and xenon (Xe) gas may be used as the inert gas.

While the above-described embodiment is described based on forming thetitanium nitride film (TiN film) on the substrate, the above-describedtechnique is not limited thereto. According to the embodiment, titanium(Ti), which is a transition metal, is exemplified as an elementconstituting the film. However, the above-described technique is notlimited thereto. For example, an element such as zirconium (Zr), hafnium(Hf), tantalum (Ta), ruthenium (Ru), niobium (Nb), molybdenum (Mo),tungsten (W), yttrium (Y), lanthanum (La) and nickel (Ni) may be usedinstead of titanium. Further, a metal element other than transitionmetal such as strontium (Sr) and silicon (Si) may be used instead oftitanium. For example, the above-described technique may be applied tothe formations of a film containing at least one of the above-describedelements such as a nitride film, a carbonitride film, an oxide film, anoxycarbide film, an oxynitride film, an oxycarbonitride film, a boronnitride film, a boron carbonitride film and a metal element film.

For example, according to the above-described embodiment, the processingfurnace having a single-tube structure (i.e., the reaction tube 203) isused. However, the above-described technique is not limited thereto. Forexample, the above-described technique may also be applied when aprocessing furnace having a double-tube structure (i.e., an inner tubeand an outer tube) is used to perform the film-forming process. Sincenozzles for supplying the process gases extend from bottom to top of aninner wall of the inner tube and an exhaust port is provided at theinner wall of the inner tube opposite to the substrate, the processgases are more easily supplied onto the substrate. Thus, it is possibleto improve the uniformity of the thickness of the film formed on thesurface of the substrate.

The recipe used for the film-forming process (program containinginformation on the sequence and conditions of the film-forming process)are preferably prepared individually according to the process contentssuch as type of film to be formed or to be removed, composition ratio ofthe film, the quality the film, the thickness of the film, the processsequences and process conditions, and stored in the memory device 121 cvia an electric communication line or the external memory device 123.When starting the film-forming process, the CPU 121 a preferably selectsan appropriate recipe between the plurality of recipe stored in thememory device 121 c according to the contents of the film-formingprocess. Thus, various films having different composition ratios,different qualities and different thicknesses may be formed at highreproducibility using a single substrate processing apparatus. Further,since the burden on the operator such as inputting the processingsequences and the processing conditions may be reduced, variousprocesses may be performed quickly while avoiding a malfunction of theapparatus.

The above-described recipe is not limited to creating a new recipe. Forexample, the recipe may be prepared by changing an existing recipestored in the substrate processing apparatus in advance. When changingthe existing recipe to a new recipe, the new recipe may be installed inthe substrate processing apparatus via the electric communication lineor the recording medium in which the new recipe is stored. The existingrecipe already stored in the substrate processing apparatus may bedirectly changed to a new recipe by operating the input/output device122 of the substrate processing apparatus.

The above-described embodiment and the modified examples may beappropriately combined. The processing sequences and the processingconditions of the combinations may be substantially the same as those ofthe above-described embodiment.

According to the technique described herein, the controllability of athickness of a film formed on a large surface area substrate having asurface area greater than a surface area of a bare substrate can beimproved and the thickness uniformity between films formed on aplurality of large surface area substrates accommodated in a substrateloading region can be improved by reducing the influence of the surfacearea of the large surface area substrate and the number of the largesurface area substrates due to a loading effect even when the pluralityof large surface area substrates are batch-processed using a batch typeprocessing furnace.

What is claimed is:
 1. A method of manufacturing a semiconductor deviceusing a substrate retainer comprising a substrate loading regionprovided with a plurality of slots and capable of loading and holding amaximum of X (X is a natural number equal to or greater than 3)substrates in the plurality of slots, the method comprising: (a) loadingY (Y is a natural number less than X) product substrates in thesubstrate retainer in a dispersed manner by adjusting Z (Z is a naturalnumber) indicating a maximum number of the product substrates loadedconsecutively in the substrate retainer such that a density distributionof the product substrates in the substrate loading region when Z isadjusted is more flattened compared with the density distribution of theproduct substrates when Z is equal to Y; and (b) loading the substrateretainer where the Y product substrates are dispersedly loaded into aprocess chamber and processing the Y product substrates.
 2. The methodof claim 1, wherein, when X is equal to or greater than 25 and equal toor less than 200, Z is adjusted such that a density distribution of theproduct substrate of every 11 slots consisting of a given slot and 10slots closest thereto when Z is adjusted is more flattened compared withthe density distribution of the product substrates in the substrateloading region when Z is equal to Y.
 3. The method of claim 1, wherein,when X is equal to or greater than 11 and equal to or less than 24, adensity distribution of the product substrate of every 5 slotsconsisting of a given slot and 4 slots closest thereto when Z isadjusted is more flattened compared with the density distribution of theproduct substrates in the substrate loading region when Z is equal to Y.4. The method of claim 1, wherein, when X is equal to or greater than 5and equal to or less than 10, a density distribution of the productsubstrate of every 3 slots consisting of a given slot and 2 slotsclosest thereto when Z is adjusted is more flattened compared with thedensity distribution of the product substrates in the substrate loadingregion when Z is equal to Y.
 5. The method of claim 1, wherein a filmhaving a predetermined thickness is formed on surfaces of the productsubstrates by performing a cycle a predetermined number of times in (b),the cycle comprising supplying a plurality of process gases to theprocess chamber without mixing the plurality of process gases.
 6. Themethod of claim 1, wherein the product substrates are large surface areasubstrates comprising patterns formed on upper surfaces thereof, whereineach of the large surface area substrates is a substrate whose surfacearea is larger than or equal to 3πr² where r is a radius thereof.
 7. Themethod of claim 1, wherein the film having the predetermined thicknessis formed on the product substrates by correcting the predeterminednumber of times according to a total surface area of the productsubstrates loaded in the substrate loading region, the total surfacearea being obtained by multiplying an upper surface area of each of theproduct substrates and the number Y.
 8. The method of claim 1, whereinat least one among a fill-dummy substrate and a monitor substrate isloaded in (X-Y) slots where the product substrates are not loaded. 9.The method of claim 1, wherein a plurality of monitor substrates arerespectively loaded in a plurality of slots where the product substratesare not loaded such that distances between the plurality of monitorsubstrates and the plurality of slots where the product substrates areloaded are the same.
 10. A method of manufacturing a semiconductordevice using a substrate retainer comprising a substrate loading regionprovided with a plurality of slots and capable of loading and holding amaximum of X (X is a natural number equal to or greater than 3)substrates in the plurality of slots, the method comprising: (a) loadingY (Y is a natural number less than X) substrates having patterns formedthereon in the substrate retainer in a dispersed manner by adjusting Z(Z is a natural number) indicating a maximum number of the substrateshaving patterns formed thereon loaded consecutively in the substrateretainer such that a density distribution of surface area of thesubstrates having patterns formed thereon in the substrate loadingregion when Z is adjusted is more flattened compared with the densitydistribution of surface area of the substrates having patterns formedthereon when Z is equal to Y; and (b) loading the substrate retainerwhere the Y substrates having patterns formed thereon are dispersedlyloaded into a process chamber and processing the Y substrates havingpatterns formed thereon.
 11. A method of loading a substrate using asubstrate retainer comprising a substrate loading region provided with aplurality of slots and capable of loading and holding a maximum of X (Xis a natural number equal to or greater than 3) substrates in theplurality of slots, the method comprising: loading Y (Y is a naturalnumber less than X) product substrates in the substrate retainer in adispersed manner by adjusting Z (Z is a natural number) indicating amaximum number of the product substrates loaded consecutively in thesubstrate retainer such that a density distribution of the productsubstrates in the substrate loading region when Z is adjusted is moreflattened compared with the density distribution of the productsubstrates when Z is equal to Y.
 12. The method of claim 11, wherein theproduct substrates are large surface area substrates comprising patternsformed on upper surfaces thereof, wherein each of the large surface areasubstrates is a substrate whose surface area is larger than or equal to3πr² where r is a radius thereof.
 13. The method of claim 11, wherein atleast one among a fill-dummy substrate and a monitor substrate is loadedin (X-Y) slots where the product substrates are not loaded.
 14. Themethod of claim 11, wherein a plurality of monitor substrates arerespectively loaded in a plurality of slots where the product substratesare not loaded such that distances between the plurality of monitorsubstrates and the plurality of slots where the product substrates areloaded are the same.
 15. A non-transitory computer-readable recordingmedium storing a program that causes a computer to execute a sequence byusing a substrate retainer comprising a substrate loading regionprovided with a plurality of slots and capable of loading and holding amaximum of X (X is a natural number equal to or greater than 3)substrates in the plurality of slots, the sequence comprising: (a)loading Y (Y is a natural number less than X) product substrates in thesubstrate retainer in a dispersed manner by adjusting Z (Z is a naturalnumber) indicating a maximum number of the product substrates loadedconsecutively in the substrate retainer such that a density distributionof the product substrates in the substrate loading region when Z isadjusted is more flattened compared with the density distribution of theproduct substrates when Z is equal to Y.
 16. The non-transitorycomputer-readable recording medium of claim 15, wherein the productsubstrates are large surface area substrates comprising patterns formedon upper surfaces thereof, wherein each of the large surface areasubstrates is a substrate whose surface area is larger than or equal to3πr² where r is a radius thereof.
 17. The non-transitorycomputer-readable recording medium of claim 15, wherein the sequencefurther comprises: (b) loading the substrate retainer where the Yproduct substrates are dispersedly loaded into a process chamber andprocessing the Y product substrates, wherein a cycle is performed apredetermined number of times in (b), the cycle comprising: supplying aplurality of process gases to the process chamber without mixing theplurality of process gases; and forming a film having a predeterminedthickness on surfaces of the product substrates by correcting thepredetermined number of times according to a total surface area of theproduct substrates loaded in the substrate loading region, the totalsurface area being obtained by multiplying an upper surface area of theproduct substrates and the number Y.
 18. A substrate processingapparatus comprising: a process chamber having a substrate retainerincluding a substrate loading region provided with a plurality of slotsand capable of loading and holding a maximum of X (X is a natural numberequal to or greater than 3) substrates in the plurality of slots; asubstrate transfer mechanism configured to transfer the plurality ofsubstrates into the substrate retainer; and a controller configured tocontrol the substrate transfer mechanism to load Y (Y is a naturalnumber less than X) product substrates in the substrate retainer in adispersed manner by adjusting Z (Z is a natural number) indicating amaximum number of the product substrates loaded consecutively in thesubstrate retainer such that a density distribution of the productsubstrates in the substrate loading region when Z is adjusted is moreflattened compared with the density distribution of the productsubstrates when Z is equal to Y.